052-6216 rev e 5-2006 apt50gf120b2_lr(g) typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci?ed. symbol v ces v ge i c1 i c2 i cm ssoa p d t j ,t stg t l apt50gf120b2_lr(g) 1200 30 135 75 150 150a @ 1200v 781 -55 to 150 300 unit volts amps watts c parametercollector-emitter voltage gate-emitter voltage continuous collector current 7 @ t c = 25c continuous collector current @ t c = 100c pulsed collector current 1 switching safe operating area @ t j = 150c total power dissipationoperating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. the fast igbt is a new generation of high voltage power igbts. using non-punch through technology, the fast igbtoffers superior ruggedness, fast switching speed and low collector-emitter on voltage. ? low forward voltage drop ? high freq. switching to 20khz ? rbsoa and scsoa rated ? ultra low leakage current ? intergrated gate resistor: low emi, high reliability fast igbt 1200v apt50gf120b2r apt50gf120lr APT50GF120B2RG* apt50gf120lrg* *g denotes rohs compliant, pb free terminal finish. (l) (b2) to-264 t-max ? g c e static electrical characteristics characteristic / test conditionscollector-emitter breakdown voltage (v ge = 0v, i c = 500a) gate threshold voltage (v ce = v ge , i c = 700a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 50a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 50a, t j = 125c) collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) intergrated gate resistor symbol v (br)ces v ge(th) v ce(on) i ces i ges r g(int) units volts ana ? apt website - http://www.advancedpower.com caution: these devices are sensitive to electrostatic discharge. proper hand ling procedures should be followed. min typ max 1200 4.5 5.5 6.5 2.5 3.0 3.1 100 1000 100 5 downloaded from: http:///
052-6216 rev e 5-2006 apt50gf120b2_lr(g) dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 600v i c = 50a t j = 150c, r g = 1.0 ?, 7 v ge = 15v, l = 100h,v ce = 1200v inductive switching (25c) v cc = 800v v ge = 15v i c = 50a r g = 1.0 ? 7 t j = +25c inductive switching (125c) v cc = 800v v ge = 15v i c = 50a r g = 1.0 ? 7 t j = +125c characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (with diode) 5 turn-off switching energy 6 turn-on delay timecurrent rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (with diode) 5 5 turn-off switching energy 6 min typ max 3460 385 225 9.5 340 30 205 150 25 43 260 70 3600 4675 2640 25 43 300 95 3750 6400 3400 unit pf v nc a ns j ns j thermal and mechanical characteristics unit c/w gm min typ max .16 n/a 6.1 characteristicjunction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and diode leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ?gure 21, but with a silicon carbide diode.5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) 7 r g is external gate resistance, not including r g(int) nor gate driver impedance. (mic4452) mircosemi reserves the right to change, without notice, the speci?cations and information contained herein . downloaded from: http:///
052-6216 rev e 5-2006 apt50gf120b2_lr(g) typical performance curves v gs(th) , threshold voltage v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 250s pulse test<0.5 % duty cycle 160140 120 100 8060 40 20 0 160140 120 100 8060 40 20 05 4 3 2 1 0 1.151.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0 1 2 3 4 5 6 0 5 10 15 20 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 350 400 8 10 12 14 16 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 180160 140 120 100 8060 40 20 0 1614 12 10 86 4 2 0 5 4 3 2 1 0 180160 140 120 100 8060 40 20 0 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction tem perature t j , junction temperature (c) t c , case temperature (c) figure 7, threshold voltage vs. junction temperature figure 8, dc collector current vs case temper ature 15v 12v 11v 9v 13v 8v v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 125c t j = 25c t j = -55c t j = 125c t j = 25c t j = -55c v ge = 15v v ce = 960v v ce = 600v v ce = 240v i c = 50a t j = 25c t j = 25c. 250s pulse test <0.5 % duty cycle 10v i c = 100a i c = 50a i c = 25a i c = 100a i c = 50a i c = 25a lead limited downloaded from: http:///
052-6216 rev e 5-2006 apt50gf120b2_lr(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 800v r g = 1.0 ? l = 100h switching energy losses (mj) e on2 , turn on energy loss (mj) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (mj) e off , turn off energy loss (mj) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector curre nt i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector curre nt i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junc tion temperature r g = 1.0 ? , l = 100 h, v ce = 800v v ce = 800v t j = 25c or 125c r g = 1.0 ? l = 100h v ge = 15v t j = 25 or 125c,v ge = 15v 10 30 50 70 90 110 10 30 50 70 90 110 10 30 50 70 90 110 10 30 50 70 90 110 10 30 50 70 90 110 10 30 50 70 90 110 0 5 10 15 20 0 25 50 75 100 125 r g = 1.0 ? , l = 100 h, v ce = 800v 3530 25 20 15 10 50 140120 100 8060 40 20 0 2520 15 10 50 3530 25 20 15 10 50 t j = 125c, v ge = 15v t j = 25c, v ge = 15v 350300 250 200 150 100 50 0 120100 8060 40 20 07 6 5 4 3 2 1 0 2520 15 10 50 v ce = 800v v ge = +15v r g = 1.0 ? t j = 125c t j = 25c v ce = 800v v ge = +15v r g = 1.0 ? t j = 125c t j = 25c v ce = 800v v ge = +15v t j = 125c v ce = 800v v ge = +15v r g = 1.0 ? e on2, 100a e off, 100a e on2, 50a e off, 50a e on2, 25a e off, 25a e on2, 100a e off, 100a e on2, 50a e off, 50a e on2, 25a e off, 25a downloaded from: http:///
052-6216 rev e 5-2006 apt50gf120b2_lr(g) typical performance curves 0.180.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 z jc , thermal impedance (c/w) 0.3 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 figure 19b, transient thermal impedance model 10 20 30 40 50 60 70 80 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c d = 50 %v ce = 800v r g = 1.0 ? 6010 51 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc d = 0.9 0.7 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t c = 75 c t c = 100 c 6,0001,000 500100 160140 120 100 8060 40 20 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18,minimim switching safe operatin g area 0 10 20 30 40 50 0 200 400 600 800 1000 1200 1400 c res c ies c oes 0.0663 0.0941 0.00740 0.252 dissipated power (watts) t j (c) t c (c) z ext are the external thermal impedances: case to sink, sink to ambient, etc. set to zero when modeling only the case to junction. z ext downloaded from: http:///
052-6216 rev e 5-2006 apt50gf120b2_lr(g) apt40dq120 e1 sac: tin, silver, copper t-max ? (b2) package outline dimensions in millimeters and (inches) collector emitter gate collector 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090)2.69 (.106) 0.76 (.030)1.30 (.051) 3.10 (.122)3.48 (.137) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016)0.79 (.031) collector emitter gate collector 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 2-plcs. e1 sac: tin, silver, copper to-264(l) package outline i c a d.u.t. v ce figure 21, inductive switching test circuit v cc figure 22, turn-on switching waveforms and de?nitions t j = 125c switching energy 5% 10% t d(on) 90% 10% t r collector current collector voltage gate voltage figure 23, turn-off switching waveforms and de?nitions t j = 125c switching energy 0 90% t d(off) 10% t f 90% collector voltage collector current gate voltage downloaded from: http:///
|
